Preparation and applications of a polymer-supported phosphoryl azide

A polymer-supported diphenylphosphoryl azide was prepared. This polymer-supported version of DPPA is useful due to its lower toxicity, moisture tolerance and ease of workup after reaction. The synthetic application of this solid-phase reagent was explored by conversion of a variety of carboxylic acids to urethanes and ureas through Curtius rearrangement reactions. Carboxylic acids bearing different functional groups (aromatic, aliphatic and heterocyclic carboxylic acids) were subjected to the reaction. The corresponding products were isolated with satisfactory yields.     

Space time-index plots for probing dynamical nonstationarity

We propose a simple method to efficiently probe dynamical nonstationarity in observed time series. In a space time-index plot, the density distributions as a function of normalized time-index are V-shaped due to nonstationarity. We show that this method is workable for short data sets and typical examples are illustrated.     

Large time behavior of the solutions to the Boltzmann equation with specular reflective boundary condition

In this paper a half space problem for the one-dimensional Boltzmann equation with specular reflective boundary condition is investigated. It is shown that the solution of the Boltzmann equation time-asymptotically converges to a global Maxwellian under some initial conditions. Furthermore, a time-decay rate is also obtained.     

p+209Bi核反应微观数据的理论计算

利用光学模型、激光模型、蒸发模型及扭曲波玻恩近似理论,对入射能量从阈能到300MeV,p+²⁰⁹Bi的中子反应截面、剩余核截面、出射粒子的多重数进行了理论计算及分析,并将计算结果与实验数据进行了比较.同时得到一组能量到50?0MeV与实验数据符合很好的光学势参数.     

多时滞随机神经网络的稳定性

通过构建李雅普偌夫函数的方法和利用半鞅收敛定理对一类随机时滞神经网络的全局指数稳定进行了分析,提出了易于判定随机时滞神经网络几乎必然指数稳定性新的代数判据,推广了[1]中的主要结论.     

Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h